Showing posts with label 그래핀. Show all posts
Showing posts with label 그래핀. Show all posts

Tuesday, November 22, 2011

Brief review for 2 dimensional materials(Graphene, MoS2, BN)


Nowadays, several two dimensional (2D) material was studied with its unique properties. The figure shows various 2D materials such as Graphene, Molybdenum disulfide (MoS2), Boron nitride (BN), and hybrid structure of 2D materials (graphene on BN in this figure). The graphene has been experimentally discovered few years ago by Phillip Kim, A.K. Geim and their coworkers. They used mechanically exfoliation method for separating layers from graphite as shown in Figure (a). Graphene has various unique properties such as high mobility, possibility of quantum effect at room temperature, ambipolar electric field effect and application for flexible and transparent devices. Recently, the MoS2 field-effect transistor shows fantastic performance with Hafnium Oxide used for dielectric layer, (It was published in Nature nanotechnology). It has not only higher mobility than silicon but also high On/Off ratio. The BN was suggested to replace silicon dioxide deposited substrate which is usually used for graphene substrate. The graphene devices show enhanced properties on BN due to elimination of charge trapping, rough surface, and the same hexagonal structure (It was also published in Nature nanotechnology). The figure (d) shows BN/graphene structure by using stacking process which had been posted yesterday on my blog.


Optical images for (a) Graphene, (b) MoS2, (c) BN, and (d) hybrid 2D structure.

Monday, November 21, 2011

Exfoliation method for graphene and boron nitride (BN)


Graphene


Boron nitride


The graphene and Boron nitride (BN) could be exfoliated by mechanical exfoliation method.

Recently, BN was successfully used to replace substrate for graphene.
As you know, the graphene device shows the excellent property on BN.

I think that the other material also could be used for it.

I hope somebody will find it and get a publication in Science and nature!! :)


Boron nitride (BN) and Graphene stacking process

Thesedays, the Boron nitride (BN) is very promissing material for high quality of graphene device.
They have a same hexagonal structure.
Graphene device shows fantastic performance with BN.

The graphene devices on SiO2 has problems such as charge trapping and roughness....etc..
Graphene is one atommic layer which could get a huge affection with various substrates.


Now, I'm doing the stacking process for graphene and BN.
My result is posted below this text.

Dr. Bang is going to make e-beam lithography pattern, I hope he will get  a successful result....
Let's go!! BN/Graphene!!




요즘 BN이 한창 뜨고 있다.
그이유는 그라핀과 같은 Hexagonal structure이기 때문이지.
Graphene이 SiO2웨이퍼 위에서 본래의 성능을 내지 않는 것은 모두가 잘 알고 있다.
이유인 즉, Charge trapping도 있고, roughness문제~ 등등이 있을 것이다.
Graphene이 워낙 얇은 (one atomic thick) 이다 보니, roughness란 아주 중요하다.

현재 BN과 Graphene을 적층을 하고 있다.

앞으로 이빔 패터닝을 곧 해낼 것인데, 연구실 내에 미스터 방연구원이 어서 해내어 주길 바란다.

으으.........너만 해내면 된다...방! 화이팅.....




그림은 본인이 만든 Graphene과 BN 적층 구조이다. 곧 이 위에! 소자를 만들리!
교수님과 함께 힘을 합쳐 ㅋㅋ!!


그럼...See you